Hot Phonons Contribution to scattering rates in Single-Walled Carbon Nanotubes

P. Gautreau, T. Ragab, C. Basaran
University of Tabuk, SA

Keywords: carbon nanotubes, Monte Carlo simulations, scattering rates


The influence of hot phonons on the electron-phonon scattering rates is studied via an Ensemble Monte Carlo(EMC) simulation with step by step update of the phonon occupation number to account for the generation of hot phonons in metallic armchair (10, 10) carbon nanotubes. EMC simulations are carried out at different temperatures ranging from 300 to 1800 K and at electric field forces ranging from 5KV/cm to 20 KV/cm. The energy dispersion relation is calculated using a tight binding formulation while the phonon dispersion relation is calculated using the Fourth nearest neighbor interactions between atoms. The hot phonon contribution to the scattering rates appears to be a function of applied electric force field at room temperature, while it becomes independent of the applied electric force field for higher temperatures. The influence of hot phonons on the joule heating is more pronounced around room temperature, and diminishes for higher temperatures. The results of the Ensemble Monte Carlo simulation at very high temperatures (around 1800K and above) suggest that the presence of non-equilibrium phonons may reduce the joule heating of single-walled carbon nanotubes (SWCNTs).