Nanolayer Interconnect Structures Ageing by Beam Resonance Method

G. Janczyk, T. Bieniek
Instytut Technologii Elektronowej, PL

Keywords: reliability, accelerated ageing, MEMS beam, thin layers


This paper discusses important aspects of investigation on interconnects reliability and ageing which has to be considered in nanoscale. The research is ongoing and applies to structures like SiP, SoC where mechanical stress caused by thermal cycling, heat dissipation, assembly technique etc. distributes inside thin layers of metal interconnects. The accelerated ageing technique has been developed and applied. It relies on MEMS silicon beams excited externally by mechanical vibration of the substrate. It allows to speed up the ageing process by high frequency vibration reflecting thousands of stress cycles. Results evaluation will be achieved on the basis of measurements on variation of interconnect resistance. To achieve sufficient measurement stability, accuracy and real-time observation the indirect measurement technique mentioned above will be used to follow phenomena present during the experiment This paper presents methodology of investigation applied to impose accelerated ageing of thin metallization layers commonly met in heterogeneous structures prone to thermo-mechanical ageing. It presents dedicated MEMS structures along with description of ageing indirect measurement technique. Methodology and results will be discussed during presentation on the basis of real measurements and results achieved.