Adding New Capabilities to Silicon CMOS Integrated Circuits via Deterministic Programmed Assembly

T.S. Mayer
The Pennsylvania State University, US

Keywords: nanoelectronics


The recent International Technology Roadmap for Semiconductors highlighted not only the need to continue Si CMOS miniaturization, but also the growing importance of expanding its capabilities by integrating new materials and devices with the Si circuitry. Attractive materials include narrow bandgap semiconductors that operate at lower supply voltages, giving lower power consumption without sacrificing speed. Molecular and metal oxide materials, which can produce a large electronic response to chemical vapors or biological molecules, offer sensing capabilities. However, the high temperatures and harsh chemicals used in conventional fabrication processes generally damage these materials or the Si circuitry, which up to now has made it difficult to effectively couple them.