CVD Grown Graphene Transfer Using Catalytic Thin Metal Film

M.H. Sohrabi and F. Yaghmaie
University of California, Davis, US

Keywords: CVD grown grapheme, graphene transfer, catalytic metal

Summary:

Graphene transfer process is a key step for maintaining the electrical and mechanical properties of the layer over a large scale area with high efficiency. Here we are introducing a new method of transferring a CVD grown graphene layer using 300 nm thin catalytic metal (C-Metal) (Copper or Nickel), which is already used for its growth, as the carrier to an arbitrary substrate. After transfer, the graphene layer will be sandwiched between the C-Metal at the top and the substrate at the bottom. In this process, unlike the common methods of PMMA or dry transfer, the C-Metal is not etched away, instead it is used for carrying graphene to the substate and later this C-Metal can be patterned as a contact to the graphene. In this process, using C-metal not only circumvents the issue of residues from organic carrier, but it also transfers the entire grown graphene with itself. Furthermore, the CVD grown graphene layer is formed on the C-Metal and we believe it can result in a very low contact resistance. The resulted fabricated devices show low sheet resistances of 500-700 ohms/square, which can be attributed to the support of C-Metal during the transfer.