Report on the Atomically Precise, No Interface, Device Regime Workshop

J.N. Randall, J.B. Ballard, J.H.G. Owen, S.D. Manning
Zyvex Labs, US

Keywords: nanoelectronic devices, atomically precise


The paper will present the findings of a workshop held in June 2012 at NIST to explore a new device regime with no materials interfaces and atomically precise placement of dopant atoms. The participants concluded that the atomic resolution and precision of STM patterning technology and the lack of heterogeneous materials interfaces for patterns of P dopants in Si have already demonstrated unprecedented advantages to realize components of a quantum computing technology, conducting nanowires, downscaled quantum dot devices, and low noise performance. They pointed to a number of improvements to the fabrication technology that would expand its usefulness. They also concluded that in addition to the quantum computing device technologies that are being investigated by Simmons and others, that there were potential advantages for classical digital devices, analog devices, and potentially even optoelectronic and other device regimes.