The Effect of Dot Array Composition on Electron Transition Between Quantum Dots

J. Nimmo, I. Filikhin, S.G. Matinyan, B. Vlahovic
North Carolina Central University, US

Keywords: quantum dots


This work was continued the investigates of the spatial transition of both electrons and holes taking into consideration the double lateral quantum dots (DLQD) when placed in an electric field that lies along the x-axis.We are modeling the InAs double QDs embedded into the GaAs substrate. Realistic QD geometry for the InAs/GaAs DQDs is applied. The localization of electron in the system (left or right QDs) can be fixed by choosing electric field magnitude. Influence of shape asymmetry of the left/right dots to the transition point is studied to find optimal parameters for control of electron position. The double quantum rings (DQR) are also considered as particular case of the non-identical QDs. For DQR we compare the electron transition in both cases of electric and magnetic fields. Present studies have included the effect of the composition (dot separation and doping) of quantum dot arrays on electron transition between dots. This information is important to know since it is not always possible to control the exact spacing and chemical makeup of dot arrays in the laboratory.