Integration of SiNWs on MOSFET Gate terminal: From device fabrication to electrical characterization

M. Taghinejad, H. Taghinejad, A. Saeedi, M. Abdolahd, S. Mohajerzadeh
University of Tehran, IR

Keywords: silicon nanowire, FET, integration

Summary:

Nanostructured materials provide unique features that could not be achieved in bulk constructions. silicon nanowires (SiNWs) due to the exclusive controllable physical and electrical properties as well as established growth methods are most appealing ones. However, efficient conversion of nonelectrical signals produced by nanowire based devices into electrical output is still a challenge and contemporary techniques are mostly ineffective and not compatible with eminent silicon technology. Considering the exceptional proficiency of the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in producing highly controllable electrical signals could make MOSFET an appropriate candidate to overcome the mentioned problem. In this paper, we have proposed integration of SiNWs on the gate terminal of a MOSFET as a competent method for achieving electrical signals from nanowires and effect of this integration on the output characteristics of the device and also threshold voltage is deeply investigated.