Nanotech 2011

A Drift-Diffusion Model of Pinned Photodiode Enabling Opto-Electronic Circuit Simulation

S. Mei
Peking University Shenzhen Graduate School, CN

Keywords: drift-diffussion model, pinned photodiode, CMOS image sensor

Abstract:

A drift-diffusion analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.
 

TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 BioNanotech 2011 TechConnect Summit 2011
Program | Tracks | Exhibition | Press | Venue | Register |
Symposia | Short Courses | News | Subscribe | Contact | Site Map
© Copyright 2010 TechConnect World. All Rights Reserved.