Nanotech 2011

Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

N. Ashraf, D. Vasileska
Arizona State University, US

Keywords: reliability, random traps, threshold voltage

Abstract:

Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.
 

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