Nanotech 2011

A Novel Silicon-based Wideband Nano Switch for RF Applications

Y.X. Yang, R. Ramer
University of New South Wales (UNSW), AU

Keywords: RF NEMS, cantilever beams, EBL, silicon, CMOS monolithic integration, surface micromachining

Abstract:

This paper presents, for the first time, a silicon-based wideband RF nano switch with simulation fabrication measurement and analysis. Port-to-port simulation results of the RF nano switch indicate that the designed switch has a potential to achieve good RF performance during nano scale devices integration. The nano switch is fabricated on a tri-layer high resistivity <100> silicon substrate using surface micromachining approach. This can lead to a high potential of integrating RF nano switch with CMOS circuits to perform a cost effective system-on-a-chip solution. Electron beam lithography is adopted to define layer structure. An IC compatible metal deposition process is used in fabrication. Proximity effect is optimized by dose-shape correction method. Fabrication process and SEM picture of the fabricated switch are illustrated in the paper. Measurement results for open switch indicate that the fabricated switch exhibit a satisfactory isolation. Finally, the possible causes of signal loss during measurement and future work for improvements are analyzed.
 

TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 BioNanotech 2011 TechConnect Summit 2011
Program | Tracks | Exhibition | Press | Venue | Register |
Symposia | Short Courses | News | Subscribe | Contact | Site Map
© Copyright 2010 TechConnect World. All Rights Reserved.