Nanotech 2011

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

X. Zhang
Peking University, CN

Keywords: nanoscale DG-MOSFET, random dopant fluctuation, reliability

Abstract:

The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.
 

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