Nanotech 2010

Control of Conducting Path in Resistive Memory Utilizing Ferritin Protein with Metal Nano Dot

M. Uenuma, B. Zheng, K. Kawano, M. Horita, S. Yoshii, I. Yamashita, Y. Uraoka
Nara Institute of Science and Technology, JP

Keywords: memory, ReRAM, RRAM, nanodot

Abstract:

Bio-nano-process (BNP) has been proposed as promising bottom-up process. Recently, there is large interest in application of BNP to memory devices such as resistive random access memory (ReRAM). According to the proposed resistive switching mechanisms, it has been reported that the voltage stress randomly creates conductive filaments inside the NiO matrix, causing large dispersion of memory properties. In this study, we report the observation of controlled filament path by metal nano dot and fabrication of ReRAM embedded nanodots. Metal nanodot can be expected to help the formation of the conductive path due to the concentration of electric field. Localized conducting filaments by Au nanodots were observed by using conducting atomic force microscopy. In addition, we fabricated Pt/NiO/Pt ReRAM device embedded Pt nanodots. Nanodots were obtained using bio-mineralization of Ferritin protein. TEM images and EELS mapping image of fabricated ReRAM showed that Pt nanodots with the diameter of approximately 3 nm were formed inside the NiO layer. Electrical measurements exhibit stable resistance switching between high and low resistance states.
 
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