Nanotech 2010

Individual SiGe Nanowire Chemical Composition Depth Profiling and Surface Oxidation Analyzed by Auger Electron Spectroscopy

J.S. Hammond, U. Givan, D. Paul, F. Patolsky
Physical Electronics USA, US

Keywords: nanowire, SiGe, Auger Electron Spectroscopy


The lateral and depth distributions of the surface oxidation and the surface Phosphorous doping concentrations have been measured from an individual SixGe(1-x) 60 nm diameter nanowire with Auger Electron Spectroscopy combined with sputter ion depth profiling. The surface imaging spectroscopy characterization of the CVD-LVS grown nanowires interpret the conductivity measurements of the nanowires.
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