Nanotech 2010

Characterization of an ultra high aspect ratio electron beam resist for nano-lithography

S. Lewis, D. Jeanmaire, V. Haynes, L. Piccirillo
The University of Manchester, UK

Keywords: high aspect ratio, electron beam resist, lithography

Abstract:

The performance of a new electron beam resist called SM20L-15 for use in electron beam lithography has been investigated. It was found that the clearing dose of this resist was 1025uC/cm2. The result is that 200nm features were fabricated, producing an aspect ratio of 10:1, therefore, the proximity effects commonly seen in electron beam lithography were considerably reduced.
 
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