Nanotech 2010

Synthesis of highly-doped silicon and germanium nanoparticles in a low-pressure plasma-reactor for thermoelectric and solar applications

H. Grimm, N. Petermann, A. Gupta, H. Wiggers
University of Duisburg-Essen, DE

Keywords: silicon, germanium, doped, nanoparticles, synthesis, microwave, plasma, reactor

Abstract:

Microwave-plasma induced thermal decomposition of gaseous precursors like germane (GeH4) and silane (SiH4) is used to synthesize semiconductor nanoparticles for thermoelectric and thermal applications. P and n-doping can be achieved by mixing silane and germane with diborane (B2H6) and phosphine (PH3), respectively. Adjusting the fraction of the respective precursor in the gas phase is used to control the dopant concentration.
 
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