Nanotech 2010

Microwave and RF Applications of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC ) MOSFET

P. Malik, R. Chajaur, M. Gupta, R.S. Gupta
Semiconductor Devices Research Laboratory, IN

Keywords: ATLAS-3D, corner effect, DEVEDIT-3D, NJD, RF, TRC MOSFET

Abstract:

In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS and DEVEDIT. Further, the influence of technology parameter variations such as negative junction depth (NJD), substrate doping and workfunction difference has been investigated for the proposed GME-TRC MOSFET. The simulation study reveals that GME-TRC MOSFET exhibits superior performance in terms of cut-off frequency, maximum unilateral power gain (MUG), maximum available power gain (Gma) and intrinsic delay and thus the result offers the opportunity for realizing the reliability of GME-TRC MOSFET for high speed logic and RF applications.
 
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