Nanotech 2010

Maskless Lithography Using Patterned Amorphous Silicon Layer Induced by Femtosecond Laser Irradiation

A. Kiani, K. Venkatakrishnan, B. Tan
Ryerson University, CA

Keywords: maskless lithography, amorphous silicon, femtosecond laser


In this research, we reported a maskless lithography method by a combination of laser amorphization of silicon and wet alkaline etching. This technique can lead to a promising solution for maskless lithography because in comparison to the previous techniques, it involves less processing steps and requires simple equipment configuration. Scanning Electron Microscope (SEM), a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy analyses were used to evaluate the quality of amorphous layer and the etching process.
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