Nanotech 2010

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

W.H. Chen, R. Lardé, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige
Groupe de Physique des Matériaux, FR

Keywords: dopant, nanowire, semiconductors, characterization, tools

Abstract:

The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.
 
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