Nanotech 2010

Self-assembly derived sub-50nm scale silicon pillar arrays as high resolution molds for nanoimprint lithography

S. Krishnamoorthy
Institute of Materials Research and Engineering (IMRE), SG

Keywords: self-assembly, nanoimprint lithography, copolymer, pattern transfer, nanopillar array, nanopatterning


We explore use of self-assembly derived silicon pillar arrays as high resolution molds for Nano Imprint Lithography (NIL). Nanopillar arrays with feature size and spacing down to sub-50nm length scales can be produced through pattern transfer of self-assembled copolymer reverse micelles on silicon substrates. The self-assembly process can be controlled to yield lithographic masks with spacing that can be tuned in steps of a few nanometers.The approach allows combining the advantages of the copolymer lithography, a cost-effective bottom-up technique with that of nanoimprint lithography (NIL), a versatile top-down patterning tool. Creating NIL molds with sub-100nm feature sizes and spacing, over large areas (few square centimeters) can be a daunting challenge for direct write techniques such as focused ion beam or e-beam lithography. Self-assembly using copolymers is ideally suited for this task of creating billions of nanostructures per square centimeter area of surface in a parallel manner, and thereby significantly lowering the fabrication costs. The means of controlling the self-assembly process to achieve molds with desired geometric characteristics (viz. size, spacing, aspect ratios), pattern transfer conditions that enable achieving the smallest feature sizes in the mold, the imprint processing conditions to achieve a high-fidelity transfer and the use of imprinted polymer templates to derive technologically relevant nanostructures such as plasmonic or semiconductor nanoarrays would be presented.
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