Nanotech 2010

Characteristic Optimization of Single- and Double-Gate Tunneling Field Effect Transistors

K-F Lee, M-H Han, I-S Lo, C-Y Yiu, Y. Li
National Chiao Tung University, TW

Keywords: TFETs, current ratio, subthreshold slope

Abstract:

The simulation results of this study have shown that the device with heavier source doping and shorter effective channel length lead to interesting device performance of TFETs. Such characteristic could be considered for device structure design optimization for Si TFETs. We are currently extending this study to include more designing and material parameters for high-performance TFET devices in low power ICs.
 
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