Nanotech 2010

Metal Oxide Nanowires for Applications in Transparent Electronics and Display Electronics

P-C Chen, Y. Fu, C. Zhou
University of Southern California, US

Keywords: doped metal oxide nanowires, transparent electronics, transistors, nanoelectronics, AMOLED display

Abstract:

Metal oxide nanowires have stimulated significant interest for transparent electronics and display electronics, as they offer high transparency, great electron mobility, and room temperature. The core technology to realize the transparent electronics requires the development of high-performance transparent thin film transistors (TTFTs), with high device mobility, moderate carrier concentration, low threshold voltage, and steep subthreshold slope. Currently, TTFTs fabricated with amorphous or polycrystalline transparent conducting oxide thin films have been widely studied. However, TTFTs made from these materials usually exhibit rather low mobilities (0.2~120 cm2V-1sec-1) and high threshold voltages (Vth: 10~20 V). We present high-performance arsenic-doped indium oxide nanowires for transparent electronics, including their implementation in TTFTs and transparent active-matrix organic light-emitting diodes displays. The As-doped In2O3 nanowires were synthesized using a laser ablation process, and then fabricated into TTFTs with indium-tin-oxide as the source, drain and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (~1,490 cm2V-1s-1), on/off ratios (5.7 × 106), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 uA for a single nanowire. All devices exhibit good optical transparency (~81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities,and a fully integrated seven-segment AMOLED display was fabricated with a good transparency and with each pixel controlled by two nanowire transistors. This display successfully showed different digital numbers. Our results suggest that As-doped In2O3 nanowires have promise as building blocks for future transparent electronics and display electronics.
 
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