A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles

V.A. Stuchinsky, G.N. Kamaev, M.D. Efremov, S.A. Arzhannikova
Institute of Semiconductor Physics, RU

Keywords: Si nanoparticles, MOS capacitor, tunneling

Summary:

A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.