Microtech 2011

Performance Study of Nitride-Based Gunn Diodes

G. Aloise, S. Vitanov, V. Palankovski
Advanced Material and Device Analysis Group, AT

Keywords: simulation, Gunn, nitride, diode


In this work, we assess the performance of InN Gunn diodes, as a superior alternative to GaN. We perform two-dimensional mixed-mode device/circuit simulation accounting for self-heating effects. We verify available theoretical results for GaN-based Gunn diodes. We use a proprietary hydrodynamic high-field mobility model, calibrated against Monte Carlo simulation data, which properly accounts for the NDM effects. Thus, a fundamental oscillation frequency of 70 GHz and an output power of 39 dBm is reached for a 3 um device, which is in agreement with previous results for the same setup. We study an InN Gunn diode with an active layer of 3 um length, connected to a LCR-Cavity, which we optimized. As a result, we obtain a fundamental oscillation frequency of 150 GHz.The corresponding calculated output power is 8 dBm. Although the predicted output power for the InN Gunn diode is lower than that expected for GaN devices, the former demonstrates a superior fundamental frequency due to the higher electron velocity. Compared to known GaAs devices, InN Gunn diode of the same size delivers roughly the same power at the fourfold frequency.

TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 BioNanotech 2011 TechConnect Summit 2011
Program | Symposia | Exhibition | Press | Venue | Register |
Short Courses | News | Subscribe | Contact | Site Map
© Copyright 2010 TechConnect World. All Rights Reserved.