Microtech 2011

A Phase-Change Random Access Memory Model for Circuit Simulation (invited presentation)

M. Chan
HKUST, HK

Keywords: phase change memory, PCM

Abstract:

A temperature tracking approach has been developed to model the property of phase-change memory (PCM) behavior under input pulses with arbitrary magnitude and shapes. By utilizing the Johnson-Mehl-Avrami equation to monitor the crystal fraction in the phase-change element crystallization process, the resulting resistance of the memory is dynamically calculated. Multi-level memory program and data retention can also be simulated using the proposed method. The model has been implemented in a circuit simulator by Verilog-A and has been verified by experimental data in the literature as well as numerical simulation
 

TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 BioNanotech 2011 TechConnect Summit 2011
Program | Symposia | Exhibition | Press | Venue | Register |
Short Courses | News | Subscribe | Contact | Site Map
© Copyright 2010 TechConnect World. All Rights Reserved.