Microtech 2011

The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTs

B. Padmanabhan, D. Vasileska, S.M. Goodnick
Arizona State University, US

Keywords: GaN HEMTs, electromechanical coupling

Abstract:

we present simulation results for GaN HEMTs in which the structure has additional AlN spacer layer thus completely modifying the electromechanical coupling approach.
 

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