Microtech 2011

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

X. Zhang
Peking University, CN

Keywords: nanoscale DG-MOSFET, random dopant fluctuation, reliability


The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.

TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 BioNanotech 2011 TechConnect Summit 2011
Program | Symposia | Exhibition | Press | Venue | Register |
Short Courses | News | Subscribe | Contact | Site Map
© Copyright 2010 TechConnect World. All Rights Reserved.