Microtech 2011

Electrical performance comparison of Symmetric Toggle Switch for SiO2 and HfO2 dielectric layers

K. Maninder
Central Electronics Engineering Research Institute, IN

Keywords: RF MEMS, HfO2, SiO2, dilecetric, STS


This paper presents the electrical performance comparison of Symmetric Toggle RF MEMS Switch (STS), by incorporating hafnium oxide (HfO2) as a dielectric material instead of silicon dioxide (SiO2). Fig. 1(a) and (b) shows the 3-D view and working principle of STS. STS is based on 50Ω CPW configuration with torsion springs of movable membrane anchored to the ground planes of CPW. The bridge structure consists of two micro-torsion actuators, which are connected to each other through levers and an over-lap area. The membrane is at a gap of 3 µm from central conductor.In this paper an idea of using similar device design for two different bands has been presented by using two different dielectric materials. Same switch design and mask can be used to fabricate the RF MEMS capacitive Symmetric Toggle Switch to operate in two different bands with optimum performance

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