Microtech 2011

Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

H. Abebe, E. Cumberbatch

Keywords: CNTFET, device modeling, device simulation, TCAD


A 2-D channel electrostatic potential model of CNTFET is presented. The model is developed by directly solving Laplace’s equation in cylindrical coordinates with appropriate boundary conditions. To the best of our knowledge, the Technology Computer Aided Design (TCAD) tool vendors have not provided models for CNT devices yet for the purpose of 2-D and 3-D device simulations. We believe the model presented in this paper can be useful for TCAD application.

TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 BioNanotech 2011 TechConnect Summit 2011
Program | Symposia | Exhibition | Press | Venue | Register |
Short Courses | News | Subscribe | Contact | Site Map
© Copyright 2010 TechConnect World. All Rights Reserved.