Microtech2010 2010

Electrical characteristics of self-assembled Ge nanocrystals embedded in SiO2

E.S.M. Goh, T.P. Chen, C.Q. Sun, M. Yang, Y.C. Liu
Nanyang Technological University, SG

Keywords: Ge nanocrystals, self-assembly, capacitance-voltage characteristic, flatband voltage shift, memory application


Self-assembled Ge nanocrystals were synthesized through a low temperature method, where an ultra-thin Ge film went through rapid thermal annealing of 450 °C for 50 s. The formation of Ge nanocrystals was observed using the atomic force microscopy. Flatband voltage shift was observed in capacitance-voltage (C-V) measurement, thus indicating that Ge nanocrystals act as charge nodes, which can be further used for memory application. The existence of tunneling path between Ge nanocrystals and Si substrate was also observed, where a strong conduction peak near the flatband voltage of every C-V curves can be seen in the conductance-voltage characteristic.
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