A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs
B. Cousin, M. Reyboz, O. Rozeau, M.-A. Jaud, T. Ernst, J. Jomaah
CEA, LETI, MINATEC, FR
Keywords: Ddvice modeling, gate-all-around (GAA) MOSFET, short-channel effects (SCE)
Abstract:
A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface potential approach. Results regarding I-V characteristics, for short-channel transistors, are compared to numerical simulations and validate our method in all operating regions.