Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices
H. Abebe, E. Cumberbatch, S. Uno, V. Tyree
University of Southern California/ISI, US
Keywords: circuit simulation, compact device modeling, MOSFET, SPICE
Abstract:
The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation across the device is assumed. Our compact models are compared with the 2-D numerical data from Sentaurus and give excellent results.