Microtech2010 2010

Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors

L. Forbes, M.Y. Louie
Oregon State University, US

Keywords: texturing, silicon, near infrared, photodetectors

Abstract:

When the silicon is not strongly absorbing in the near infrared a back side textured surface works in conjunction with a totally internally reflecting front side surface to best increase the absorption of near infrared photons. This results in multiple internal reflections and light trapping. This paper describes a simple analysis technique and design considerations in the use of backside texturing to improve the near infrared(IR) response of silicon photodiodes, photodetectors, solar cells and imagers. A large enhancement in the near infrared responsivity of silicon photodetectors can be achieved.
 
Program | Speaker Exhibitor | Press | Venue Register |
Symposia | Short Courses | News | Subscribe | Contact | Site Map
© Copyright 2009 TechConnect World. All Rights Reserved.