Microtech2010 2010

Theory of Bipolar MOSFET (BiFET) with Electrically Short Channels (invited presentation)

B.B. Jie, C-T. Sah
Univesity of Florida, US

Keywords: BiFET, pure base, intrinsic Debye length, long- channel characteristics, short-channel correction

Abstract:

Bipolar MOSFETs with a pure base and two MOS gates usually have electrically short channels compared with its intrinsic Debye length of about 25 m at room temperatures. This short channel effect was missed by all previous authors because they neglected the gradient of the longitudinal electrical field in their computations of the long-channel characteristics of the transistors. This paper evaluates the short channel contributions to the drain current, drain conductance and transconductance. The results show that long-channel electrical characteristics are still good approximations when the physical channel length is several hundred times shorter than the intrinsic Debye length (25 m/100=250nm) but the long channel electrical characteristics are substantially modified at 25nm.
 
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