Microtech2010 2010

Monolithic CMOS MEMS technology development: A piezoresistive-sensors case study

A. Chaehoi, D. Weiland, D. O’Connell, S. Bruckshaw, S. Ray, M. Begbie
Institute for System Level Integration, UK

Keywords: MEMS, CMOS, SOI, 3-axis accelerometer, pressure sensor, piezoresistive


This paper presents the development of a monolithic CMOS-MEMS platform under the iDesign and SemeMEMS projects with the aim of jointly providing an open access “one-stop-shop” prototyping facility for integrated MEMS. This work addresses the implementation of a 3-axis accelerometer and a pressure sensor using Semefab in-house double-poly single-metal CMOS process on a 380/4/15μm SOI wafer; the membrane and the proof mass being micromachined using double-sided DRIE (Fig.1). This monolithic approach promises, in high volume production and using low complexity processes, a dramatic cost reduction over hybrid sensors. Furthermore, the embedded signal conditioning and the low-noise level in polysilicon gauges enables high performances to be achieved by implementing dedicated on-chip amplification and filtering circuitry.
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