Microtech2010 2010

Magnetoelectric properties of piezeoelectric/magnetostrictive thin film devices

J.Y. Zhai, J. Xiong, Y.Y. Zhang, G.F. Zou, Q.X. Jia
Los Alamos National Laboratory, US

Keywords: magnetoelectric, cantilever, sensor, devices

Abstract:

The magnetoelectric effect is defined by the electric field induced under application of a magnetic field; or vice versa, by the magnetic induction induced under application of an electric field. Since the turn of the millennium, giant magnetoelectric (ME) effects have been found in laminated composites of piezoelectric and magnetostrictive layers. Here piezoelectric BaTiO3 and magnetostrictive Terfenol-D thin film have been deposited on Si cantilever by pulsed laser deposition. The thickness of each layer is various from 1 um to 20 um. The ME voltage coefficient up to 1V/cm-Oe is obtained under a DC magnetic bias of 200 Oe. The frequency dependence of ME voltage coefficient have been investigation and the resonance frequency can be tuned by either the dimension of the thin film layers or applied DC magnetic bias. The thin film devices can use as a magnetic sensor to detect minute magnetic field and generate a small, controllable electromagnetic wave at room temperature.
 
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