Microtech2010 2010

The Effects of Gamma rays on p-channel MOSFET

M.A. Iqbal, U. Firdous

Keywords: PMOS, Gamma rays, oxide trapped charges, charge excitation


The effect of Gamma rays on PMOS is studied. The range of Gamma rays used from 1M.rad to 3M.rad. The device is exposed by gamma radiation and observes its parameters as Threshold voltage, trans-conductance and output conductance respectively. These parameters are measured and carefully analyzed before and after irradiation. It has been observed that this radiation degrades the device performance by changing the parameters due to oxide trapped charges and interface. When the gamma radiation falls on the device it deposits energy by causing ionization in the oxide layer. The ionization changes the charge excitation, charge transport and decomposition properties of the materials. It has been found the threshold voltage increased linearly with increasing dose rate in almost devices.
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