Microtech2010 2010

Improving the conversion efficiency of the polycrystalline silicon thin film solar cells by rapid thermal annealing and hydrogen plasma treatment

Y.J. Lee, D.J. Lee, I.M. Sung, J.H. Baek, M.S. Hwang, J.M. Jo, K.H. Kim, S.H. Roh, Y.H. Lee, S.W. Lee, D.J. Kim, K.S. Lim
TG Solar Corporation, KR

Keywords: polycrystalline silicon, rapid thermal annealing, hydrogen plasma treatment


The conversion efficiencies of the conventional silicon thin film solar cells based on amorphous or microcrystalline silicon films are less than 7% at mass production level. To overcome this efficiency limits, the solar cells with a new materials or multi-junction structures should be developed. The polycrystalline silicon thin films can be a candidate for low cost and high efficiency solar cells by combining the high material quality and the advantages of thin film technologies. These polycrystalline silicon films are fabricated from amorphous silicon films by high temperature crystallization process. However, there exist many defects in the films, so that the photo-generated carriers are recombined at these defect sites. In this research, the high quality polycrystalline silicon thin films were fabricated by rapid thermal annealing and hydrogen plasma treatment after crystallization. Also, we fabricated and characterized the solar cells using these polycrystalline silicon thin films. These cells show better current-voltage characteristics due to the reduction of the defect densities and the recombination of photo-generated carriers. The conversion efficiencies were improved from 1.90 % without any post-treatment after crystallization to 7.67 % and 8.45 % after hydrogen plasma treatment and combination process of rapid thermal annealing and hydrogen plasma treatment, respectively.
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