Microtech2010 2010

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

M-H Han, Y. Li
National Chiao Tung University, TW

Keywords: intrinsic parameter fluctuation, nanoscale MOSFET, emerging device technology, modeling, simulation

Abstract:

In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) are comprehensively studied. The results of this study show that RDF dominates the NMOS device characteristics, and WKF is major factor in PMOS. PVE affect the CMOS device AC characteristics, especially at high gate bias.
 
Program | Speaker Exhibitor | Press | Venue Register |
Symposia | Short Courses | News | Subscribe | Contact | Site Map
© Copyright 2009 TechConnect World. All Rights Reserved.