Microtech2010 2010

Wafer-Scale Fabrication of Separated Carbon Nanotube Thin-Film Transistors for Display Applications and Transparent Electronics

C. Wang, J. Zhang, C. Zhou
University of Southern California, US

Keywords: separated nanotubes, thin-film transistors, transparent electronics


Pre-separated, semiconductive enriched carbon nanotubes hold great potential for thin-film transistors and display applications due to their high mobility, high percentage of semiconductive nanotubes, and room-temperature processing compatibility. Here in this paper, we report our progress on wafer-scale processing of separated nanotube thin-film transistors (SN-TFTs) for display applications, including key technology components such as wafer-scale assembly of high-density, uniform separated nanotube networks, high-yield fabrication of devices with superior performance, and demonstration of organic light-emitting diode (OLED) switching controlled by a SN-TFT. Based on separated nanotubes with 95% semiconductive nanotubes, we have achieved solution-based assembly of separated nanotube thin films on complete 3 inch Si/SiO2 wafers, and further carried out wafer-scale fabrication to produce transistors with high yield (> 98%), small sheet resistance (~ 25 kΩ/sq), high current density (~ 10 μA/μm), and superior mobility (~ 52 cm2V-1s-1). Moreover, on/off ratios of > 104 are achieved in devices with channel length L > 20μm. Similar approach has also been extended to transparent substrates. By using a bilayer dielectric structure consists of Al2O3 deposited by atomic layer deposition and SiO2 deposited by E-beam evaporation, and using indium-tin-oxide as the electrodes, we have fabricated high performance transparet SN-TFTs on 3 inch glass wafers. In addition, OLED control circuit has been demonstrated with the SN-TFT, and the modulation in the output light intensity exceeds 104. Our approach can be easily scaled to large areas and could serve as critical foundation for future nanotube-based transparent and display electronics.
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