Kris A. Bertness

Kris A. Bertness

Project Leader, Semiconductor Metrology for Energy Conversion

National Institute of Standards and Technology

Dr. Bertness is the project leader for the Semiconductor Metrology for Energy Conversion project at the National Institute of Standards and Technology (NIST) in Boulder, Colorado. She serves as the NIST liaison to the National Signature Initiative on Nanotechnology for Solar Energy Collection and Conversion. Her research interests include III-V semiconductor crystal growth, characterization, and device design, with specialization in GaN nanowires, quantum dots and solar cells.

The current focus of the project’s work is on metrology of nanomaterials and development of new instrumentation for characterizing nanomaterials and photovoltaic materials, including multifunction scanning probes, precision imaging, atom probe tomography and novel solar simulators. The GaN nanowire work at NIST has produced over 80 publications including collaborative papers with researchers around the world. Their 2012 paper on nanowire electrical contacts was selected as a Publisher’s Pick and Cover article by the journal Nanotechnology. In 2006 this team’s work was recognized with an R&D Micro/Nano 25 award.

Prior to joining NIST in 1995, Dr. Bertness developed record-efficiency solar cells at the National Renewable Energy Laboratory (Golden, CO) and at the Varian Research Center (Palo Alto, CA). She received her Ph. D. in physics from Stanford University in 1987 and her B. A. degree from Oberlin College, Oberlin, OH, in 1981.

Speaking in the Nanotechnology for Solar Energy Collection and Conversion - NNI Signature Initiative Symposium.

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