Monolithic integration of (In,Ga)As nanowire light emitting diodes on Silicon

A. Tahraoui, E. Dimakis, M. Ramsteiner, U. Jahn, O. Brandt, H. Riechert, L. Geelhaar
Paul-Drude-Institut für Festkörperelektronik, DE

Keywords: core/multi-shell nanowire, LEDs, electroluminescence


In this work, we developed the growth and the processing of light emitting diodes (LEDs) based on vertical GaAs/(In,Ga)As core/multi-shell nanowires grown epitaxially on p-type Si(111) substrates. LEDs on Si operating in the infrared range of the electromagnetic spectrum can have a great potential for fast optical data transfer applications within a chip. The growth was performed by MBE in the self-assisted mode, without using catalysts that could deteriorate the electrical properties of the nanowires and the Si substrate. The structure of each core/multi-shell nanowire consists of the undoped GaAs core, the p-type GaAs:Be inner shell, a single 10-nm-thick In0.24Ga0.76As quantum well intermediate shell, and the n-type GaAs:Si outer shell. Cathodoluminescence and electroluminescence measurements were used to assess the emission properties of the LEDs. The electroluminescence spectrum recorded under continuous bias, demonstrated Room temperature emission at 985 nm. The enhanced performance of the LEDs operation, obtained under pulsed bias, is attributed to the self-heating of the nanowires. Our results confirm the great potential of III-V nanowire devices monolithically integrated on Si, and are encouraging to investigate concepts for further improvements of the device performance.